IRFB4127PBF vs IRFB7545PBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFB4127PBF tarafından Infineon ve IRFB7545PBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFB4127PBF | IRFB7545PBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRFB4127PBF | IRFB7545PBF |
| Technology | TrenchFET Gen 6 (HEXFET) | StrongIRFET™ (HEXFET, N-Channel) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 200 V | — |
| Continuous Drain Current (Id) at Tc | 76 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (Vgs) max | ±20 V | — |
| Drain-Source On-Resistance (Rds(on)) max | 20 mOhm | — |
| Total Gate Charge (Qg) | 100 nC | — |
| Power Dissipation (Pd) at Tc | 375 W | — |
| İşletim Jant Sıcaklığı | -55C to +175C | -55C to +175C |
| Paket / Kas | TO-220AB (through-hole) | — |
| Montaj Türü | Through Hole | Through Hole (THT) |
| RoHS Durumu | Lead-Free (PBF suffix indicates RoHS compliance) | — |
| Configuration | Single | — |
| Polarity | — | N-Channel |
| VDS (Drain-Source Voltage) max | — | 60 V |
| VGS (Gate-Source Voltage) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 5.9 mOhm |
| Continuous Drain Current (ID) at Tc=25C | — | 95 A |
| Pulsed Drain Current (IDM) | — | 380 A |
| Single-Pulse Avalanche Current (IAS) | — | 57 A |
| Power Dissipation (PD) at Tc=25C | — | 125 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Paket | — | TO-220AB (Through-Hole) |
| Lead-Free / RoHS | — | Yes (Lead-Free, PBF suffix) |
| MSL Seviyesi | — | N/A (Through-Hole) |
| Gate Drive Voltage (typical) | — | 10 V |
| Avalanche Energy Rated | — | Yes |