IRFB4310PBF vs IRF1310NSTRLPBF Perbandingan
Perbandingan bersamaan detil IRFB4310PBF dari Infineon dan IRF1310NSTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFB4310PBF | IRF1310NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 130 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissition (PD) at Tc=25C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 7 mOhm | 36 mOhm |
| On-Resistance RDS(on) typical at VGS=10V | 5.6 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Qg) | 170 nC | 73.3 nC |
| Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Rentang Suhu Kerja | -55C to +175C (junction) | -55C to +175C |
| Paket | TO-220AB (through-hole) | D2PAK (TO-263AB) |
| Tipe Mounting | Through Hole | Surface Mount |
| Avalanche Rated | Yes | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes (Pb-free PBF suffix) | — |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD) at TC=25C | — | 160 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Built-in Diode | — | Yes (intrinsic body diode) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Configuration | — | Single with built-in diode |