IRFL014NTRPBF vs IRFR120NTRLPBF Perbandingan

Perbandingan bersamaan detil IRFL014NTRPBF dari Infineon dan IRFR120NTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFL014NTRPBF IRFR120NTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide N-Channel
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at 25 C 1.9 A —
Continuous Drain Current (ID) at 70 C [DATA_NEEDED: ID at 70 C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=10V 160 milliohm —
Gate Charge (Qg) typical 7 nC —
Threshold Voltage VGS(th) typical [DATA_NEEDED: VGS(th)] —
Power Dissipation (PD) at 25 C 1.0 W (free air), up to 2.1 W with proper PCB copper —
Rentang Suhu Kerja -55 C to +150 C (junction) —
Paket SOT-223 (TO-261-4), 4-pin (3 + tab) PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Avalanche Rated Yes (fully avalanche rated) —
dv/dt Rating Yes (dynamic dv/dt rated) —
Lead-Free / RoHS Yes / Compliant —
Level MSL Level 1 (per JEDEC J-STD-020) —
Technology HEXFET (planar N-channel, fifth generation) IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25C — 9.4 A
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V — 210 mΩ
Total Gate Charge (Qg) — 16.7 nC
Power Dissipation (PD) at TC=25C — 48 W
Rentang Suhu Hubung Kerja — -55C to +175C
Avalanche Energy Rated — Yes (fully avalanche rated)
Status RoHS — Compliant
Lead-Free Finish — Yes (Pb-free)

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