IRFL014NTRPBF vs IRFR120NTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFL014NTRPBF disebabkan oleh Infineon dan IRFR120NTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFL014NTRPBF IRFR120NTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide N-Channel
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at 25 C 1.9 A —
Continuous Drain Current (ID) at 70 C [DATA_NEEDED: ID at 70 C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=10V 160 milliohm —
Gate Charge (Qg) typical 7 nC —
Threshold Voltage VGS(th) typical [DATA_NEEDED: VGS(th)] —
Power Dissipation (PD) at 25 C 1.0 W (free air), up to 2.1 W with proper PCB copper —
Gambaran Suhu Operasi -55 C to +150 C (junction) —
Kemasan SOT-223 (TO-261-4), 4-pin (3 + tab) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Avalanche Rated Yes (fully avalanche rated) —
dv/dt Rating Yes (dynamic dv/dt rated) —
Lead-Free / RoHS Yes / Compliant —
Aras MSL Level 1 (per JEDEC J-STD-020) —
Technology HEXFET (planar N-channel, fifth generation) IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25C — 9.4 A
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V — 210 mΩ
Total Gate Charge (Qg) — 16.7 nC
Power Dissipation (PD) at TC=25C — 48 W
Gambaran Suhu Hubungan Operasi — -55C to +175C
Avalanche Energy Rated — Yes (fully avalanche rated)
Status RoHS — Compliant
Lead-Free Finish — Yes (Pb-free)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga