IRFP250N vs IRFP250MPBF Perbandingan

Perbandingan bersamaan detil IRFP250N dari Infineon dan IRFP250MPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFP250N IRFP250MPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $2,55
Technology N-Channel HEXFET Power MOSFET (Fifth Generation) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC 30 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TC 214 W —
On-Resistance RDS(on) [DATA_NEEDED: typical RDS(on) at VGS=10V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/range] —
Paket TO-247AC (through-hole) —
Tipe Mounting Through Hole Through Hole
Rentang Suhu Kerja -55 C to +175 C (TJ) —
Avalanche Energy Rating Fully avalanche rated —
dv/dt Rating Dynamic dv/dt rated —
Switching Frequency Optimization Optimized for applications below 100 kHz —
Qualification Standard JEDEC —
Lead-Free Status Yes (PBF suffix) —
Status RoHS Compliant Compliant
Planar Cell Structure Yes (wide SOA) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFP250MPBF
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (Vds) — 200 V
Continuous Drain Current (Id) at Tc=25C — 30 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current value]
Static Drain-Source On-Resistance (RDS(on)) — 75 mOhm max @ Vgs=10V
Gate-Source Threshold Voltage (Vgs(th)) — 4 V (typ)
Total Gate Charge (Qg) — 82 nC
Power Dissipation (Pd) at Tc=25C — 214 W
Suhu Hubung Kerja — -55C to +175C
Paket / Case — TO-247AC (3-pin + tab)
Jumlah Pin — 3
Avalanche Rated — Yes
Lead-Free — Yes
Level MSL — 1 (unlimited)

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