IRFR2405TRPBF vs IRFR3806TRPBF Perbandingan

Perbandingan bersamaan detil IRFR2405TRPBF dari Infineon dan IRFR3806TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR2405TRPBF IRFR3806TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Status Active —
FET Type N-Channel —
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 55 V 60 V
Continuous Drain Current (ID) at Tc=25C 56 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] +/- 20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance RDS(on) max at VGS=10V 16 mOhm —
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at 5V] —
Total Gate Charge (Qg) 70 nC 22 nC
Power Dissipation (PD) at Tc=25C 110 W —
Suhu Hubung Kerja -55C to +175C —
Paket TO-252AA (DPAK) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) + Tab —
Level MSL 1 —
Status RoHS Compliant (Lead-Free PBF suffix) —
Bebas Halogen [DATA_NEEDED: halogen-free status] —
Avalanche Rated Yes (100% avalanche tested) Yes (HEXFET family)
Transistor Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Continuous Drain Current (ID) at Tc — 43 A
On-State Resistance RDS(on) max — 15.8 mOhm at VGS = 10 V
Power Dissipation (Pd) at Tc = 25 C — 71 W
Paket / Case — TO-252AA (DPAK)
Rentang Suhu Kerja — -55 C to +175 C
Number of Units in IC — 1
Lead-Free / RoHS — Yes (PBF suffix, lead-free)

Spek dan Sumber

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