IRFR2405TRPBF vs IRFR3806TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR2405TRPBF disebabkan oleh Infineon dan IRFR3806TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR2405TRPBF IRFR3806TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Status Active —
FET Type N-Channel —
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 55 V 60 V
Continuous Drain Current (ID) at Tc=25C 56 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] +/- 20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance RDS(on) max at VGS=10V 16 mOhm —
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at 5V] —
Total Gate Charge (Qg) 70 nC 22 nC
Power Dissipation (PD) at Tc=25C 110 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan TO-252AA (DPAK) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) + Tab —
Aras MSL 1 —
Status RoHS Compliant (Lead-Free PBF suffix) —
Boson Bebas [DATA_NEEDED: halogen-free status] —
Avalanche Rated Yes (100% avalanche tested) Yes (HEXFET family)
Transistor Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Continuous Drain Current (ID) at Tc — 43 A
On-State Resistance RDS(on) max — 15.8 mOhm at VGS = 10 V
Power Dissipation (Pd) at Tc = 25 C — 71 W
Kemasan / Case — TO-252AA (DPAK)
Gambaran Suhu Operasi — -55 C to +175 C
Number of Units in IC — 1
Lead-Free / RoHS — Yes (PBF suffix, lead-free)

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