IRFR4615TRLPBF vs IRF150P220AKMA1 Perbandingan

Perbandingan bersamaan detil IRFR4615TRLPBF dari Infineon dan IRF150P220AKMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRFR4615TRLPBF IRF150P220AKMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology IR MOSFET (N-Channel Enhancement Mode) StrongIRFET
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at TC=25C 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
On-Resistance RDS(on) max at VGS=10V 42 mOhm —
Total Gate Charge (Qg) 26 nC —
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Power Dissipation (PD) at TC=25C 144 W —
Avalanche Energy (EAS) 109 mJ —
Rentang Suhu Kerja -55C to +175C -55C to +175C
Paket TO-252AA (DPAK) TO-247-3 (PG-TO247-3)
Tipe Mounting Surface Mount Through Hole
Lead-Free / RoHS Yes (PBF suffix indicates Pb-free) —
Energi Pulsa Tandai 109 mJ —
Manufacturer — Infineon Technologies
Part Number — IRF150P220AKMA1
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS max) — 150 V
Continuous Drain Current (ID) at Tc=25C — 203 A
On-Resistance (RDS(on) max) at VGS=10V — 2.7 mOhm
Gate-Source Voltage (VGS max) — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typ]
Power Dissipation (Pd) at Tc=25C — 556 W
Power Dissipation (Pd) at Ta=25C — 3.8 W
Terminal Finish — Tin (Sn)
JESD-609 Code — e3
Status RoHS — Compliant
Lead-Free — Yes

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