IRFR4615TRLPBF vs IRF150P220AKMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR4615TRLPBF disebabkan oleh Infineon dan IRF150P220AKMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR4615TRLPBF | IRF150P220AKMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | IR MOSFET (N-Channel Enhancement Mode) | StrongIRFET |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25C | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| On-Resistance RDS(on) max at VGS=10V | 42 mOhm | — |
| Total Gate Charge (Qg) | 26 nC | — |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Power Dissipation (PD) at TC=25C | 144 W | — |
| Avalanche Energy (EAS) | 109 mJ | — |
| Gambaran Suhu Operasi | -55C to +175C | -55C to +175C |
| Kemasan | TO-252AA (DPAK) | TO-247-3 (PG-TO247-3) |
| Jenis Pemasangan | Surface Mount | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix indicates Pb-free) | — |
| Tenaga Gesa tunggal padek | 109 mJ | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRF150P220AKMA1 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS max) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 203 A |
| On-Resistance (RDS(on) max) at VGS=10V | — | 2.7 mOhm |
| Gate-Source Voltage (VGS max) | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation (Pd) at Tc=25C | — | 556 W |
| Power Dissipation (Pd) at Ta=25C | — | 3.8 W |
| Terminal Finish | — | Tin (Sn) |
| JESD-609 Code | — | e3 |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |