IRFR4620TRLPBF vs IRFR3806TRPBF Perbandingan
Perbandingan bersamaan detil IRFR4620TRLPBF dari Infineon dan IRFR3806TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR4620TRLPBF | IRFR3806TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFR4620TRLPBF | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | 60 V |
| Continuous Drain Current (ID) | 24 A at Tc | — |
| On-Resistance (RDS(on)) | 78 mOhm max at VGS=10V | — |
| Gate Charge (Qg) | 25 nC typical | — |
| Power Dissipation (PD) | 144 W at Tc | — |
| Technology | IR MOSFET | HEXFET (IR MOSFET) |
| Paket / Case | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +175C | — |
| Lead Free | Yes | — |
| Status RoHS | Compliant | — |
| Level MSL | 1 (Unlimited) | — |
| Transistor Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Continuous Drain Current (ID) at Tc | — | 43 A |
| On-State Resistance RDS(on) max | — | 15.8 mOhm at VGS = 10 V |
| Total Gate Charge (Qg) | — | 22 nC |
| Power Dissipation (Pd) at Tc = 25 C | — | 71 W |
| Rentang Suhu Kerja | — | -55 C to +175 C |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Number of Units in IC | — | 1 |
| Lead-Free / RoHS | — | Yes (PBF suffix, lead-free) |
| Avalanche Rated | — | Yes (HEXFET family) |