IRFR5305TRLPBF vs IRFU5305PBF Perbandingan

Perbandingan bersamaan detil IRFR5305TRLPBF dari Infineon dan IRFU5305PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR5305TRLPBF IRFU5305PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V -55 V
Continuous Drain Current (ID) at Tc=25C -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] -110 A (pulsed)
Gate-Source Voltage (VGS) max ±20 V ±20 V
RDS(on) max at VGS=-10V 65 mΩ —
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Power Dissipation (PD) at Tc=25C 110 W —
Suhu Hubung Kerja -55C to +175C -55 °C to +175 °C
Paket TO-252AA (DPAK), surface mount IPAK (TO-251AA) Through-Hole, 3 pins
Tipe Mounting Surface Mount Through Hole
Technology HEXFET fifth-generation planar MOSFET —
Avalanche Rated Yes (fully avalanche rated) Yes (EAS rated)
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") —
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
Polarity — P-Channel
Continuous Drain Current (ID) at Tc — -31 A
On-Resistance RDS(on) max @ VGS=-10V — 65 mΩ
Total Gate Charge (Qg) — 42 nC (typical)
Power Dissipation (PD) at Tc=25°C — 110 W
Thermal Resistance Junction-to-Case (RθJC) — 1.36 °C/W
Thermal Resistance Junction-to-Ambient (RθJA) — 62 °C/W
RoHS Compliance — Compliant

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