IRFR5505TRLPBF vs IRFR024NTRPBF Perbandingan
Perbandingan bersamaan detil IRFR5505TRLPBF dari Infineon dan IRFR024NTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR5505TRLPBF | IRFR024NTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| VDS (Drain-Source Voltage) | -55 V | — |
| VGS (Gate-Source Voltage) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) | -18 A (Tc) | 17 A (at TC = 25 C) |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 60 A |
| On-Resistance RDS(on) max | 110 mOhm (VGS = -10 V) | — |
| Total Gate Charge (Qg) | 21.3 nC | — |
| Power Dissipation (PD) | 57 W (Tc = 25 °C) | — |
| Rentang Suhu Kerja | -55 °C to +175 °C | — |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: RθJC] | — |
| Technology | IR MOSFET™ (HEXFET® generation 5) | — |
| Paket | TO-252AA (DPAK), surface mount | TO-252-3 (DPAK, SC-63), surface mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Level MSL | 1 | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Series | — | HEXFET Power MOSFET (5th generation) |
| Tipe Transistor | — | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | — | 55 V |
| On-Resistance (RDS(on)) | — | 75 mOhm max (at VGS = 10 V) |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Typical Gate Charge (Qg) | — | 13.3 nC |
| Total Power Dissipation (PD) | — | 45 W (at TC = 25 C) |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| Packaging | — | Tape and Reel (TR) |
| RoHS Compliance | — | Compliant (Pb-free / PbF terminations) |