IRFR9024NTRPBF vs IRF7342TRPBF Perbandingan

Perbandingan bersamaan detil IRFR9024NTRPBF dari Infineon dan IRF7342TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR9024NTRPBF IRF7342TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $0,17 —
Polarity P-Channel —
VDS (Drain-Source Voltage) -55 V —
Continuous Drain Current (Tc=25C) -11 A —
Arus Kedip Pengecor [DATA_NEEDED: pulsed drain current] —
VGS (Gate-Source Voltage) ±20 V —
VGS(th) (Threshold Voltage) [DATA_NEEDED: VGS(th) typical] —
RDS(on) Max at VGS=-10V 175 mOhm —
Total Gate Charge (Qg) 12.7 nC —
Maximum Power Dissipation (Tc=25C) 38 W —
Suhu Hubung Kerja -55C to +175C —
Paket TO-252AA (DPAK) 8-SOIC (SO-8), surface mount
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
Technology HEXFET (Gen 5) HEXFET Power MOSFET (Fifth Generation), P-Channel
Status RoHS Compliant —
Part Number — IRF7342TRPBF
Manufacturer — Infineon Technologies (formerly International Rectifier)
Configuration — Dual P-Channel MOSFET Array (two independent P-FETs in one package)
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) — -3.4 A at 25 C
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (Vgs(th)) — -1.0 V to -3.0 V (typ -1.7 V)
Drain-Source On-Resistance (RDS(on)) — 0.105 ohm max at VGS = -10 V
Maximum Power Dissumption (Pd) — 2 W
Rentang Suhu Kerja — -55 C to +150 C (Tj)
Packaging — Tape and Reel (TR)
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free, RoHS compliant)
Channel Type — P-Channel (enhancement mode)
Number of Channels — 2 (dual array)

Spek dan Sumber

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