IRFR9024NTRPBF vs IRF7342TRPBF 比較

詳細並排比較 IRFR9024NTRPBF 由 Infineon 與 IRF7342TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR9024NTRPBF IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF ✓ 啟用中

規格比較

參數 IRFR9024NTRPBF IRF7342TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
單價 (USD) $0.17 —
Polarity P-Channel —
VDS (Drain-Source Voltage) -55 V —
Continuous Drain Current (Tc=25C) -11 A —
脈衝汲極電流 [DATA_NEEDED: pulsed drain current] —
VGS (Gate-Source Voltage) ±20 V —
VGS(th) (Threshold Voltage) [DATA_NEEDED: VGS(th) typical] —
RDS(on) Max at VGS=-10V 175 mOhm —
Total Gate Charge (Qg) 12.7 nC —
Maximum Power Dissipation (Tc=25C) 38 W —
工作接面溫度 -55C to +175C —
封裝 TO-252AA (DPAK) 8-SOIC (SO-8), surface mount
安裝類型 Surface Mount Surface Mount
腳位數 3 —
Technology HEXFET (Gen 5) HEXFET Power MOSFET (Fifth Generation), P-Channel
RoHS 狀態 Compliant —
Part Number — IRF7342TRPBF
Manufacturer — Infineon Technologies (formerly International Rectifier)
Configuration — Dual P-Channel MOSFET Array (two independent P-FETs in one package)
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) — -3.4 A at 25 C
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (Vgs(th)) — -1.0 V to -3.0 V (typ -1.7 V)
Drain-Source On-Resistance (RDS(on)) — 0.105 ohm max at VGS = -10 V
Maximum Power Dissumption (Pd) — 2 W
工作溫度範圍 — -55 C to +150 C (Tj)
Packaging — Tape and Reel (TR)
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free, RoHS compliant)
Channel Type — P-Channel (enhancement mode)
Number of Channels — 2 (dual array)

資料表與資源

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