IRFS3306TRLPBF vs IRFS3306PBF Perbandingan

Perbandingan bersamaan detil IRFS3306TRLPBF dari Infineon dan IRFS3306PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFS3306TRLPBF IRFS3306PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide N-Channel
Drain-to-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) @ Tc=25°C 120 A (Infineon datasheet; 160 A pulsed per IR datasheet family) —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) Max @ VGS=10V 4.2 mΩ —
Gate Threshold Voltage (VGS(th)) 2.0 V to 4.0 V (typical range) [DATA_NEEDED: typical VGS(th)]
Total Gate Charge (Qg) 85 nC —
Power Dissipation (PD) @ Tc=25°C 230 W —
Rentang Suhu Kerja -55 °C to +175 °C (junction) —
Paket D2PAK (TO-263), surface mount D2PAK (TO-263AB) surface mount
Tipe Mounting Surface Mount Surface Mount
Technology IR MOSFET™ (HEXFET-style planar stripe) HEXFET (IR MOSFET)
Lead-Free / Halogen-Free Yes (PbF, Halogen-Free per Infineon datasheet) —
Status RoHS Compliant —
Tape & Reel Packaging 13-inch reel, 800 pcs/reel typical —
Body Diode dV/dt Capability Enhanced (per Infineon datasheet feature) —
Continuous Drain Current (ID, Tc) — 120 A (package limited)
Continuous Drain Current (ID, silicon limited) — 160 A
Gate-to-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-Resistance RDS(on) max @ VGS=10V — 4.2 mOhm
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
Total Gate Charge (Qg) typ — 85 nC
Gate-to-Drain Charge (Qgd) typ — [DATA_NEEDED: Qgd nominal value]
Power Dissipation (Pd) max @ Tc=25C — 230 W
Suhu Hubung Kerja — -55C to +175C
Level MSL — 1 (per JEDEC J-STD-020)
Lead-Free / RoHS — PbF (lead-free), RoHS compliant

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