IRFS3306TRLPBF vs IRFS3306PBF Comparação
Comparação detalhada lado a lado de IRFS3306TRLPBF por Infineon e IRFS3306PBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRFS3306TRLPBF | IRFS3306PBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,12 | $1,28 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) @ Tc=25°C | 120 A (Infineon datasheet; 160 A pulsed per IR datasheet family) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) Max @ VGS=10V | 4.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V (typical range) | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge (Qg) | 85 nC | — |
| Power Dissipation (PD) @ Tc=25°C | 230 W | — |
| Faixa de temperatura de operação | -55 °C to +175 °C (junction) | — |
| Encapsulamento | D2PAK (TO-263), surface mount | D2PAK (TO-263AB) surface mount |
| Tipo de montagem | Surface Mount | Surface Mount |
| Technology | IR MOSFET™ (HEXFET-style planar stripe) | HEXFET (IR MOSFET) |
| Lead-Free / Halogen-Free | Yes (PbF, Halogen-Free per Infineon datasheet) | — |
| Status RoHS | Compliant | — |
| Tape & Reel Packaging | 13-inch reel, 800 pcs/reel typical | — |
| Body Diode dV/dt Capability | Enhanced (per Infineon datasheet feature) | — |
| Continuous Drain Current (ID, Tc) | — | 120 A (package limited) |
| Continuous Drain Current (ID, silicon limited) | — | 160 A |
| Gate-to-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.2 mOhm |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| Total Gate Charge (Qg) typ | — | 85 nC |
| Gate-to-Drain Charge (Qgd) typ | — | [DATA_NEEDED: Qgd nominal value] |
| Power Dissipation (Pd) max @ Tc=25C | — | 230 W |
| Temperatura de junção de operação | — | -55C to +175C |
| Nível MSL | — | 1 (per JEDEC J-STD-020) |
| Lead-Free / RoHS | — | PbF (lead-free), RoHS compliant |