IRFU5305PBF vs IRF5305STRLPBF Perbandingan
Perbandingan bersamaan detil IRFU5305PBF dari Infineon dan IRF5305STRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFU5305PBF | IRF5305STRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at Tc | -31 A | — |
| Pulsed Drain Current (IDM) | -110 A (pulsed) | — |
| On-Resistance RDS(on) max @ VGS=-10V | 65 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) | 42 nC (typical) | 42 nC (Mouser listing) / 63 nC (Future Electronics listing) |
| Power Dissipation (PD) at Tc=25°C | 110 W | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Thermal Resistance Junction-to-Case (RθJC) | 1.36 °C/W | — |
| Thermal Resistance Junction-to-Ambient (RθJA) | 62 °C/W | — |
| Paket | IPAK (TO-251AA) Through-Hole, 3 pins | TO-263 / D2PAK (surface mount) |
| Tipe Mounting | Through Hole | Surface Mount |
| Avalanche Rated | Yes (EAS rated) | — |
| RoHS Compliance | Compliant | — |
| Polarity / Channel Type | — | P-Channel |
| Continuous Drain Current (ID) at TC=25C | — | -31 A |
| Continuous Drain Current (ID) at TA=25C | — | [DATA_NEEDED: ID at TA=25C] |
| RDS(on) max at VGS=-10V | — | 60 mOhm |
| RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Maximum Power Dissition at Tc | — | 110 W |
| Maximum Power Dissipation at TA | — | 3.8 W |
| Rentang Suhu Kerja | — | [DATA_NEEDED: Tj max / operating range] |
| Technology | — | HEXFET (fifth generation), IR MOSFET |
| Packaging | — | Tape & Reel (TR), 800 pcs per reel |
| Lead-Free / RoHS | — | Yes (Pb-free suffix PBF) |