IRFU5305PBF vs IRF5305STRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFU5305PBF disebabkan oleh Infineon dan IRF5305STRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFU5305PBF | IRF5305STRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at Tc | -31 A | — |
| Pulsed Drain Current (IDM) | -110 A (pulsed) | — |
| On-Resistance RDS(on) max @ VGS=-10V | 65 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) | 42 nC (typical) | 42 nC (Mouser listing) / 63 nC (Future Electronics listing) |
| Power Dissipation (PD) at Tc=25°C | 110 W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Thermal Resistance Junction-to-Case (RθJC) | 1.36 °C/W | — |
| Thermal Resistance Junction-to-Ambient (RθJA) | 62 °C/W | — |
| Kemasan | IPAK (TO-251AA) Through-Hole, 3 pins | TO-263 / D2PAK (surface mount) |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Avalanche Rated | Yes (EAS rated) | — |
| RoHS Compliance | Compliant | — |
| Polarity / Channel Type | — | P-Channel |
| Continuous Drain Current (ID) at TC=25C | — | -31 A |
| Continuous Drain Current (ID) at TA=25C | — | [DATA_NEEDED: ID at TA=25C] |
| RDS(on) max at VGS=-10V | — | 60 mOhm |
| RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Maximum Power Dissition at Tc | — | 110 W |
| Maximum Power Dissipation at TA | — | 3.8 W |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: Tj max / operating range] |
| Technology | — | HEXFET (fifth generation), IR MOSFET |
| Packaging | — | Tape & Reel (TR), 800 pcs per reel |
| Lead-Free / RoHS | — | Yes (Pb-free suffix PBF) |