IRL40S212ARMA1 vs BSZ900N20NS3GATMA1 Perbandingan

Perbandingan bersamaan detil IRL40S212ARMA1 dari Infineon dan BSZ900N20NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRL40S212ARMA1 BSZ900N20NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family StrongIRFET™ —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 200 V
Continuous Drain Current (ID, Tc) 195 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
On-Resistance (RDS(on)) 1.9 mOhm max —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ] —
Power Dissipation (PD, Tc) 231 W —
Rentang Suhu Kerja [DATA_NEEDED: Tj max] —
Paket PG-TO263-3 (D2PAK) PG-TSDSON-8 (TDSON-8 FL)
Tipe Mounting Surface Mount Surface Mount
Technology StrongIRFET™ (planar N-channel) OptiMOS 3 (N-Channel Trench MOSFET)
Status RoHS Compliant Compliant
Lead-Free Yes —
Level MSL 1 (unlimited) 1 (unlimited)
Part Number — BSZ900N20NS3GATMA1
Continuous Drain Current (ID, Tc=25C) — 15.2 A
Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) — 90 mΩ
Typical RDS(on) @ VGS=10V — 77 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th) typ) — 3.5 V
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg]
Power Dissipation (PD, Tc=25C) — 62.5 W
Suhu Hubung Kerja — -55C to +150C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
Lead-Free / Halogen-Free — Yes / Yes
ESD Protection — Yes (integrated)
Avalanche Energy Rated — Yes (EAS)

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