IRL40S212ARMA1 vs BSZ900N20NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRL40S212ARMA1 disebabkan oleh Infineon dan BSZ900N20NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRL40S212ARMA1 BSZ900N20NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family StrongIRFET™ —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 200 V
Continuous Drain Current (ID, Tc) 195 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
On-Resistance (RDS(on)) 1.9 mOhm max —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ] —
Power Dissipation (PD, Tc) 231 W —
Gambaran Suhu Operasi [DATA_NEEDED: Tj max] —
Kemasan PG-TO263-3 (D2PAK) PG-TSDSON-8 (TDSON-8 FL)
Jenis Pemasangan Surface Mount Surface Mount
Technology StrongIRFET™ (planar N-channel) OptiMOS 3 (N-Channel Trench MOSFET)
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL 1 (unlimited) 1 (unlimited)
Part Number — BSZ900N20NS3GATMA1
Continuous Drain Current (ID, Tc=25C) — 15.2 A
Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) — 90 mΩ
Typical RDS(on) @ VGS=10V — 77 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th) typ) — 3.5 V
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg]
Power Dissipation (PD, Tc=25C) — 62.5 W
Suhu Hubungan Operasi — -55C to +150C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
Lead-Free / Halogen-Free — Yes / Yes
ESD Protection — Yes (integrated)
Avalanche Energy Rated — Yes (EAS)

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