IRLL024ZTRPBF vs IRLR024NTRPBF Perbandingan
Perbandingan bersamaan detil IRLL024ZTRPBF dari Infineon dan IRLR024NTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLL024ZTRPBF | IRLR024NTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Technology | HEXFET Power MOSFET (trench-gate) | HEXFET (Advanced Process Technology) |
| FET Type | N-Channel enhancement-mode | N-Channel MOSFET, Metal Oxide |
| Drain-Source Voltage (VDS) max | 55 V | — |
| Gate-Source Voltage (VGS) max | ±16 V | — |
| Continuous Drain Current (ID) at TC=25°C | 5 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 60 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) | — |
| Total Gate Charge (Qg) typical | 7 nC | — |
| Power Dissipation (PD) at TA=25°C | 1 W | — |
| Operating Junction Temperature (TJ) | -55 °C to +150 °C | — |
| Paket | SOT-223 (TO-261-4) | TO-252AA (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (unlimited floor life) | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | — |
| Drain-to-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) at Tc=25C | — | 17 A |
| Continuous Drain Current (Id) at Tc=100C | — | [DATA_NEEDED: Id at Tc=100C] |
| Rds(on) Max @ Vgs=10V | — | 65 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.0 V to 2.0 V |
| Total Gate Charge (Qg) | — | 10 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 45 W |
| Rentang Suhu Kerja | — | -55 C to +175 C |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Gate Drive Level | — | Logic-Level |
| Lead-Free / RoHS | — | Lead-Free / RoHS Compliant |