IRLL024ZTRPBF vs IRLR024NTRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLL024ZTRPBF disebabkan oleh Infineon dan IRLR024NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLL024ZTRPBF | IRLR024NTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Technology | HEXFET Power MOSFET (trench-gate) | HEXFET (Advanced Process Technology) |
| FET Type | N-Channel enhancement-mode | N-Channel MOSFET, Metal Oxide |
| Drain-Source Voltage (VDS) max | 55 V | — |
| Gate-Source Voltage (VGS) max | ±16 V | — |
| Continuous Drain Current (ID) at TC=25°C | 5 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 60 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) | — |
| Total Gate Charge (Qg) typical | 7 nC | — |
| Power Dissipation (PD) at TA=25°C | 1 W | — |
| Operating Junction Temperature (TJ) | -55 °C to +150 °C | — |
| Kemasan | SOT-223 (TO-261-4) | TO-252AA (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (unlimited floor life) | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | — |
| Drain-to-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) at Tc=25C | — | 17 A |
| Continuous Drain Current (Id) at Tc=100C | — | [DATA_NEEDED: Id at Tc=100C] |
| Rds(on) Max @ Vgs=10V | — | 65 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.0 V to 2.0 V |
| Total Gate Charge (Qg) | — | 10 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 45 W |
| Gambaran Suhu Operasi | — | -55 C to +175 C |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Gate Drive Level | — | Logic-Level |
| Lead-Free / RoHS | — | Lead-Free / RoHS Compliant |