IRLML2803TRPBF vs IRLML6346TRPBF Perbandingan

Perbandingan bersamaan detil IRLML2803TRPBF dari Infineon dan IRLML6346TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLML2803TRPBF IRLML6346TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IRLML2803TRPBF —
Tipe Transistor N-Channel MOSFET —
Technology IR MOSFET Generation V HEXFET Power MOSFET
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 1.2 A —
On-Resistance RDS(on) at VGS=4.5V 250 mOhm maximum —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] —
Gate Charge (Qg) 3.3 nC typical —
Power Dissipation (PD) at TA=25C 540 mW —
Paket Micro3 / SOT-23 (3-pin) Micro3 / SOT-23
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (TJ) —
Gate Drive Level Logic-level (driven from 3.3V / 5V) —
Level MSL 1 1
RoHS Compliance Compliant, Halogen-Free —
Polarity — N-Channel
Continuous Drain Current (ID) — 3.4 A (TA=25C)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=2.5V — 63 mOhm
RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Gate Drive Capability — 2.5V logic-level
Maximum Power Dissipation (PD) — 1.3 W (TA=25C, 1in2 FR4)
Suhu Hubung Kerja — -55C to +150C
Lead-Free Finish — Yes (PBF suffix)
Status RoHS — Compliant

Spek dan Sumber

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