IRLML2803TRPBF vs IRLML6346TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLML2803TRPBF sa pamamagitan ng Infineon at IRLML6346TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLML2803TRPBF | IRLML6346TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRLML2803TRPBF | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | IR MOSFET Generation V | HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | — |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge (Qg) | 3.3 nC typical | — |
| Power Dissipation (PD) at TA=25C | 540 mW | — |
| Packhaging | Micro3 / SOT-23 (3-pin) | Micro3 / SOT-23 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C (TJ) | — |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) | — |
| Level ng MSL | 1 | 1 |
| RoHS Compliance | Compliant, Halogen-Free | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) | — | 3.4 A (TA=25C) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=2.5V | — | 63 mOhm |
| RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Drive Capability | — | 2.5V logic-level |
| Maximum Power Dissipation (PD) | — | 1.3 W (TA=25C, 1in2 FR4) |
| Temperature ng Junction na Operasyon | — | -55C to +150C |
| Lead-Free Finish | — | Yes (PBF suffix) |
| Tindminan RoHS | — | Compliant |