IRLML6246TRPBF vs IRLHS6242TRPBF Perbandingan

Perbandingan bersamaan detil IRLML6246TRPBF dari Infineon dan IRLHS6242TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLML6246TRPBF IRLHS6242TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLML6246TRPBF —
Technology IR MOSFET (HEXFET Power MOSFET) HEXFET (trench MOSFET)
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 20 V 20 V
Continuous Drain Current (ID) at Ta=25C 4.1 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
On-Resistance RDS(on) max @ VGS=4.5V 46 mOhm 11.7 mΩ
On-Resistance RDS(on) max @ VGS=2.5V [DATA_NEEDED: RDS(on) at 2.5V] —
Gate Threshold Voltage VGS(th) typ 1.1 V (logic-level) —
Gate Charge Qg typ [DATA_NEEDED: Qg total gate charge] —
Power Dissipation (Ta=25C) 1.3 W —
Rentang Suhu Kerja -55C to +150C (junction) —
Paket SOT-23 (Micro3) 6-PQFN (2x2) / DFN2020 with exposed pad
Tipe Mounting Surface Mount Surface Mount
RoHS Compliance Yes (Pb-free) —
Bebas Halogen Yes —
Level MSL MSL1 (per JEDEC J-STD-020) —
Gate-to-Source Voltage (VGS) — ±12 V
Continuous Drain Current (TA) — 10 A
Continuous Drain Current (TC) — 12 A
Total Gate Charge (Qg) — 14 nC
Power Dissipation (TA) — 1.98 W
Power Dissipation (TC) — 9.6 W
Suhu Kerja — -55°C to +150°C
Gate Drive Level — Logic-level (4.5V); 2.5V-capable
Qualification — JEDEC standard

Spek dan Sumber

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