IRLML6246TRPBF vs IRLHS6242TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML6246TRPBF disebabkan oleh Infineon dan IRLHS6242TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLML6246TRPBF | IRLHS6242TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRLML6246TRPBF | — |
| Technology | IR MOSFET (HEXFET Power MOSFET) | HEXFET (trench MOSFET) |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 20 V | 20 V |
| Continuous Drain Current (ID) at Ta=25C | 4.1 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | — |
| On-Resistance RDS(on) max @ VGS=4.5V | 46 mOhm | 11.7 mΩ |
| On-Resistance RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | — |
| Gate Threshold Voltage VGS(th) typ | 1.1 V (logic-level) | — |
| Gate Charge Qg typ | [DATA_NEEDED: Qg total gate charge] | — |
| Power Dissipation (Ta=25C) | 1.3 W | — |
| Gambaran Suhu Operasi | -55C to +150C (junction) | — |
| Kemasan | SOT-23 (Micro3) | 6-PQFN (2x2) / DFN2020 with exposed pad |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| RoHS Compliance | Yes (Pb-free) | — |
| Boson Bebas | Yes | — |
| Aras MSL | MSL1 (per JEDEC J-STD-020) | — |
| Gate-to-Source Voltage (VGS) | — | ±12 V |
| Continuous Drain Current (TA) | — | 10 A |
| Continuous Drain Current (TC) | — | 12 A |
| Total Gate Charge (Qg) | — | 14 nC |
| Power Dissipation (TA) | — | 1.98 W |
| Power Dissipation (TC) | — | 9.6 W |
| Suhu Operasi | — | -55°C to +150°C |
| Gate Drive Level | — | Logic-level (4.5V); 2.5V-capable |
| Qualification | — | JEDEC standard |