IRLML6346TRPBF vs BSS306NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil IRLML6346TRPBF dari Infineon dan BSS306NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLML6346TRPBF BSS306NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) 3.4 A (TA=25C) 2.3 A (Ta)
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) max @ VGS=2.5V 63 mOhm —
RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] [DATA_NEEDED: typical VGS(th) in V]
Gate Drive Capability 2.5V logic-level —
Maximum Power Dissipation (PD) 1.3 W (TA=25C, 1in2 FR4) —
Suhu Hubung Kerja -55C to +150C —
Paket Micro3 / SOT-23 SOT-23 (PG-SOT23), 3-pin
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET Power MOSFET MOSFET (Metal Oxide)
Level MSL 1 —
Lead-Free Finish Yes (PBF suffix) —
Status RoHS Compliant —
Manufacturer — Infineon Technologies
Part Number — BSS306NH6327XTSA1
Part Family — BSS306N (OptiMOS Small Signal)
FET Type — N-Channel
Power Dissipation (PD) — 500 mW (Ta)
RDS(on) max — [DATA_NEEDED: exact RDS(on) max value in mΩ]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max in V]
Suhu Kerja — -55°C to +150°C (TJ)
Qualification — AEC-Q101 (Automotive)
Lead Plating — Pb-free (RoHS compliant)
Configuration — Single N-Channel, 3-pin

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