IRLML6346TRPBF vs IRLML6246TRPBF Perbandingan

Perbandingan bersamaan detil IRLML6346TRPBF dari Infineon dan IRLML6246TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLML6346TRPBF IRLML6246TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) 3.4 A (TA=25C) —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM pulsed value]
RDS(on) max @ VGS=2.5V 63 mOhm —
RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Gate Drive Capability 2.5V logic-level —
Maximum Power Dissipation (PD) 1.3 W (TA=25C, 1in2 FR4) —
Suhu Hubung Kerja -55C to +150C —
Paket Micro3 / SOT-23 SOT-23 (Micro3)
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET Power MOSFET IR MOSFET (HEXFET Power MOSFET)
Level MSL 1 MSL1 (per JEDEC J-STD-020)
Lead-Free Finish Yes (PBF suffix) —
Status RoHS Compliant —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLML6246TRPBF
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 20 V
Continuous Drain Current (ID) at Ta=25C — 4.1 A
On-Resistance RDS(on) max @ VGS=4.5V — 46 mOhm
On-Resistance RDS(on) max @ VGS=2.5V — [DATA_NEEDED: RDS(on) at 2.5V]
Gate Threshold Voltage VGS(th) typ — 1.1 V (logic-level)
Gate Charge Qg typ — [DATA_NEEDED: Qg total gate charge]
Power Dissipation (Ta=25C) — 1.3 W
Rentang Suhu Kerja — -55C to +150C (junction)
RoHS Compliance — Yes (Pb-free)
Bebas Halogen — Yes

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