IRLML6346TRPBF vs IRLML6246TRPBF 比較
詳細並排比較 IRLML6346TRPBF 由 Infineon 與 IRLML6246TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLML6346TRPBF | IRLML6246TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) | 3.4 A (TA=25C) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM pulsed value] |
| RDS(on) max @ VGS=2.5V | 63 mOhm | — |
| RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Drive Capability | 2.5V logic-level | — |
| Maximum Power Dissipation (PD) | 1.3 W (TA=25C, 1in2 FR4) | — |
| 工作接面溫度 | -55C to +150C | — |
| 封裝 | Micro3 / SOT-23 | SOT-23 (Micro3) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | IR MOSFET (HEXFET Power MOSFET) |
| MSL 等級 | 1 | MSL1 (per JEDEC J-STD-020) |
| Lead-Free Finish | Yes (PBF suffix) | — |
| RoHS 狀態 | Compliant | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLML6246TRPBF |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 20 V |
| Continuous Drain Current (ID) at Ta=25C | — | 4.1 A |
| On-Resistance RDS(on) max @ VGS=4.5V | — | 46 mOhm |
| On-Resistance RDS(on) max @ VGS=2.5V | — | [DATA_NEEDED: RDS(on) at 2.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.1 V (logic-level) |
| Gate Charge Qg typ | — | [DATA_NEEDED: Qg total gate charge] |
| Power Dissipation (Ta=25C) | — | 1.3 W |
| 工作溫度範圍 | — | -55C to +150C (junction) |
| RoHS Compliance | — | Yes (Pb-free) |
| 無鹵素 | — | Yes |