IRLML6346TRPBF vs IRLML6246TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML6346TRPBF disebabkan oleh Infineon dan IRLML6246TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLML6346TRPBF IRLML6246TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) 3.4 A (TA=25C) —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM pulsed value]
RDS(on) max @ VGS=2.5V 63 mOhm —
RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Gate Drive Capability 2.5V logic-level —
Maximum Power Dissipation (PD) 1.3 W (TA=25C, 1in2 FR4) —
Suhu Hubungan Operasi -55C to +150C —
Kemasan Micro3 / SOT-23 SOT-23 (Micro3)
Jenis Pemasangan Surface Mount Surface Mount
Technology HEXFET Power MOSFET IR MOSFET (HEXFET Power MOSFET)
Aras MSL 1 MSL1 (per JEDEC J-STD-020)
Lead-Free Finish Yes (PBF suffix) —
Status RoHS Compliant —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLML6246TRPBF
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 20 V
Continuous Drain Current (ID) at Ta=25C — 4.1 A
On-Resistance RDS(on) max @ VGS=4.5V — 46 mOhm
On-Resistance RDS(on) max @ VGS=2.5V — [DATA_NEEDED: RDS(on) at 2.5V]
Gate Threshold Voltage VGS(th) typ — 1.1 V (logic-level)
Gate Charge Qg typ — [DATA_NEEDED: Qg total gate charge]
Power Dissipation (Ta=25C) — 1.3 W
Gambaran Suhu Operasi — -55C to +150C (junction)
RoHS Compliance — Yes (Pb-free)
Boson Bebas — Yes

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