IRLR024NTRLPBF vs IRLR024NTRPBF Perbandingan
Perbandingan bersamaan detil IRLR024NTRLPBF dari Infineon dan IRLR024NTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLR024NTRLPBF | IRLR024NTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 17 A | — |
| On-Resistance RDS(on) max at VGS=10V | 65 mΩ | — |
| Gate Threshold Voltage VGS(th) | Logic-level (drive from 3.3V/5V logic) | — |
| Total Gate Charge (Qg) | 10 nC (typical) | 10 nC (typical) |
| Maximum Power Dissipation (PD) at TC=25C | 45 W | — |
| Thermal Resistance Junction-to-Case (RθJC) | 3.3 °C/W | — |
| Thermal Resistance Junction-to-Ambient (RθJA) | 50 °C/W (PCB mount) | — |
| Avalanche Rating | Fully avalanche rated | — |
| Paket | TO-252AA (DPAK), 3-pin (2 + tab), Surface Mount | TO-252AA (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 °C to +175 °C (junction) | -55 C to +175 C |
| Status RoHS | Compliant | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Level MSL | 1 | 1 (per JEDEC J-STD-020) |
| Technology | HEXFET (cellular N-channel MOSFET) | HEXFET (Advanced Process Technology) |
| FET Type | — | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) at Tc=25C | — | 17 A |
| Continuous Drain Current (Id) at Tc=100C | — | [DATA_NEEDED: Id at Tc=100C] |
| Rds(on) Max @ Vgs=10V | — | 65 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.0 V to 2.0 V |
| Power Dissipation (Pd) at Tc=25C | — | 45 W |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Gate Drive Level | — | Logic-Level |
| Lead-Free / RoHS | — | Lead-Free / RoHS Compliant |