IRLR120NTRPBF vs IRFR220NPBF Perbandingan
Perbandingan bersamaan detil IRLR120NTRPBF dari Infineon dan IRFR220NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLR120NTRPBF | IRFR220NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (Fifth Generation, planar) | HEXFET (Planar) |
| Drain-to-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 10 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Idm] | — |
| Rds(on) Max at Vgs=10V | 185 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Total Gate Charge (Qg) | 13.3 nC | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Pd) at Tc=25C | 48 W | — |
| Rentang Suhu Kerja | -55C to +175C (junction) | -55C to +150C (junction) |
| Paket | TO-252AA (DPAK), 3-pin surface mount | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Avalanche Energy Rating | Fully avalanche rated | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | Yes, lead-free (PBF suffix) |
| Level MSL | 1 | 1 (per JEDEC J-STD-020) |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC=25C | — | 5 A |
| Power Dissipation (PD) at TC=25C | — | 43 W |
| Static Drain-Source On-Resistance (RDS(on)) max | — | 0.6 ohm at VGS = 10 V |
| Paket / Case | — | TO-252AA (DPAK) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Avalanche Energy Rated | — | Yes (per datasheet characterization) |
| Jumlah Pin | — | 3 (Gate, Drain, Source) plus tab |