IRLR2905TRPBF vs IRF640NPBF Perbandingan
Perbandingan bersamaan detil IRLR2905TRPBF dari Infineon dan IRF640NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLR2905TRPBF | IRF640NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, fifth generation) | HEXFET (5th Generation) |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | 27 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate Charge (Qg) | 32 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | 150 W |
| Suhu Hubung Kerja | -55C to +175C | -55C to +150C |
| Paket | TO-252AA (DPAK), surface mount | TO-220AB (through-hole, 3-pin) |
| Tipe Mounting | Surface Mount | Through Hole |
| Avalanche Rated | Yes | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Gate Drive | Logic-level compatible | — |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Total Gate Charge (Qg) | — | 44.7 nC |
| Tipe Transistor | — | N-Channel Enhancement Mode |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes (PBF suffix) |
| Manufacturer | — | Infineon (formerly International Rectifier) |