IRLR2905TRPBF vs IRF640NPBF 比較
詳細並排比較 IRLR2905TRPBF 由 Infineon 與 IRF640NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLR2905TRPBF | IRF640NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, fifth generation) | HEXFET (5th Generation) |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | 27 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate Charge (Qg) | 32 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | 150 W |
| 工作接面溫度 | -55C to +175C | -55C to +150C |
| 封裝 | TO-252AA (DPAK), surface mount | TO-220AB (through-hole, 3-pin) |
| 安裝類型 | Surface Mount | Through Hole |
| Avalanche Rated | Yes | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | — |
| Gate Drive | Logic-level compatible | — |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Total Gate Charge (Qg) | — | 44.7 nC |
| 電晶體類型 | — | N-Channel Enhancement Mode |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes (PBF suffix) |
| Manufacturer | — | Infineon (formerly International Rectifier) |