IRLR2905TRPBF vs IRF640NPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRLR2905TRPBF tarafından Infineon ve IRF640NPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRLR2905TRPBF | IRF640NPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, fifth generation) | HEXFET (5th Generation) |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | 27 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate Charge (Qg) | 32 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | 150 W |
| İşletim Jant Sıcaklığı | -55C to +175C | -55C to +150C |
| Paket | TO-252AA (DPAK), surface mount | TO-220AB (through-hole, 3-pin) |
| Montaj Türü | Surface Mount | Through Hole |
| Avalanche Rated | Yes | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL Seviyesi | [DATA_NEEDED: MSL rating] | — |
| Gate Drive | Logic-level compatible | — |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Total Gate Charge (Qg) | — | 44.7 nC |
| Transistor Türü | — | N-Channel Enhancement Mode |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| RoHS Durumu | — | Compliant |
| Lead-Free | — | Yes (PBF suffix) |
| Manufacturer | — | Infineon (formerly International Rectifier) |