IRLR2908TRPBF vs IRLB4030PBF Perbandingan
Perbandingan bersamaan detil IRLR2908TRPBF dari Infineon dan IRLB4030PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLR2908TRPBF | IRLB4030PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) | HEXFET (StrongIRFET family) |
| Drain-Source Voltage (Vds) | 80 V | — |
| Continuous Drain Current (Id) at Tc=25C | 30 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulsed value] | — |
| On-Resistance RDS(on) max @ Vgs=10V | 28 mOhm | — |
| On-Resistance RDS(on) typ @ Vgs=10V | 22.5 mOhm | — |
| Gate Charge (Qg) typ | 22 nC | — |
| Power Dissipation (Pd) at Tc=25C | 120 W | — |
| Suhu Hubung Kerja | -55C to +175C | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) range] | — |
| Paket | TO-252AA (DPAK), surface mount | TO-220AB |
| Tipe Mounting | Surface Mount | Through Hole |
| Configuration | Single with built-in diode | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | 87 nC |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] |
| Power Dissipation (PD) at Tc | — | 370 W |
| Rentang Suhu Kerja | — | -55C to +175C |
| Logic Level Drive | — | Yes (optimized for 4.5 V to 10 V VGS) |
| Qualification | — | JEDEC |
| Status RoHS | — | Compliant |