IRLR2908TRPBF vs IRLB4030PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLR2908TRPBF sa pamamagitan ng Infineon at IRLB4030PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRLR2908TRPBF IRLB4030PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (IR MOSFET) HEXFET (StrongIRFET family)
Drain-Source Voltage (Vds) 80 V —
Continuous Drain Current (Id) at Tc=25C 30 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm pulsed value] —
On-Resistance RDS(on) max @ Vgs=10V 28 mOhm —
On-Resistance RDS(on) typ @ Vgs=10V 22.5 mOhm —
Gate Charge (Qg) typ 22 nC —
Power Dissipation (Pd) at Tc=25C 120 W —
Temperature ng Junction na Operasyon -55C to +175C —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) range] —
Packhaging TO-252AA (DPAK), surface mount TO-220AB
Uri ng Pagpapasok Surface Mount Through Hole
Configuration Single with built-in diode —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 180 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max at VGS=10V — 4.3 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — 87 nC
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V]
Power Dissipation (PD) at Tc — 370 W
Hanay ng Temperature na Operasyon — -55C to +175C
Logic Level Drive — Yes (optimized for 4.5 V to 10 V VGS)
Qualification — JEDEC
Tindminan RoHS — Compliant

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