IRLR3110ZTRPBF vs IRLR3110ZTRLPBF Perbandingan
Perbandingan bersamaan detil IRLR3110ZTRPBF dari Infineon dan IRLR3110ZTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLR3110ZTRPBF | IRLR3110ZTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max @ VGS=10V | 14 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | 15 nC | — |
| Power Dissipation (PD) at TC=25C | 140 W | — |
| Suhu Hubung Kerja | -55C to +175C | -55C to +175C |
| Paket | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET / Trench MOSFET | IR HEXFET / Trench MOSFET |
| Level MSL | 1 (Unlimited) | [DATA_NEEDED: MSL Level] |
| Status RoHS | Compliant | Compliant (PBF suffix) |
| Lead-Free Plating | Yes (PBF suffix) | — |
| Bebas Halogen | Yes | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 42 A |
| Maximum Drain Current (ID max) | — | 63 A |
| On-Resistance (RDS(on) max) | — | 14 mOhm |
| Gate Charge (Qg) | — | 34 nC |
| Gate Drive Level | — | Logic-Level |
| Power Dissipation (PD) at TC | — | 140 W |
| Jumlah Pin | — | 3 (Drain, Gate, Source + Tab) |
| Repetitive Avalanche Rated | — | Yes |