IRLR3110ZTRPBF vs IRLR3110ZTRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLR3110ZTRPBF sa pamamagitan ng Infineon at IRLR3110ZTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLR3110ZTRPBF | IRLR3110ZTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max @ VGS=10V | 14 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | 15 nC | — |
| Power Dissipation (PD) at TC=25C | 140 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | -55C to +175C |
| Packhaging | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | HEXFET / Trench MOSFET | IR HEXFET / Trench MOSFET |
| Level ng MSL | 1 (Unlimited) | [DATA_NEEDED: MSL Level] |
| Tindminan RoHS | Compliant | Compliant (PBF suffix) |
| Lead-Free Plating | Yes (PBF suffix) | — |
| Wala sa Halogen | Yes | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 42 A |
| Maximum Drain Current (ID max) | — | 63 A |
| On-Resistance (RDS(on) max) | — | 14 mOhm |
| Gate Charge (Qg) | — | 34 nC |
| Gate Drive Level | — | Logic-Level |
| Power Dissipation (PD) at TC | — | 140 W |
| Bilang ng Pin | — | 3 (Drain, Gate, Source + Tab) |
| Repetitive Avalanche Rated | — | Yes |