IRLR3110ZTRPBF vs IRLR3110ZTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR3110ZTRPBF disebabkan oleh Infineon dan IRLR3110ZTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLR3110ZTRPBF | IRLR3110ZTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max @ VGS=10V | 14 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | 15 nC | — |
| Power Dissipation (PD) at TC=25C | 140 W | — |
| Suhu Hubungan Operasi | -55C to +175C | -55C to +175C |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET / Trench MOSFET | IR HEXFET / Trench MOSFET |
| Aras MSL | 1 (Unlimited) | [DATA_NEEDED: MSL Level] |
| Status RoHS | Compliant | Compliant (PBF suffix) |
| Lead-Free Plating | Yes (PBF suffix) | — |
| Boson Bebas | Yes | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 42 A |
| Maximum Drain Current (ID max) | — | 63 A |
| On-Resistance (RDS(on) max) | — | 14 mOhm |
| Gate Charge (Qg) | — | 34 nC |
| Gate Drive Level | — | Logic-Level |
| Power Dissipation (PD) at TC | — | 140 W |
| Kiraan Pin | — | 3 (Drain, Gate, Source + Tab) |
| Repetitive Avalanche Rated | — | Yes |