IRLR3915TRPBF vs IPD30N06S2L13ATMA4 Perbandingan

Perbandingan bersamaan detil IRLR3915TRPBF dari Infineon dan IPD30N06S2L13ATMA4 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLR3915TRPBF IPD30N06S2L13ATMA4
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Product Family HEXFET Power MOSFET —
Technology IR MOSFET (HEXFET, advanced process) Planar (OptiMOS)
Channel Type N-Channel N-Channel
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC=25C 61 A —
Continuous Drain Current (ID) at TC=100C 30 A (Tc, per distributor listing) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max at VGS=10V 14 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) 61 nC [DATA_NEEDED: Qg @ Vgs=10V, Id=30A]
Logic-Level Gate Drive Yes (logic-level compatible) —
Power Dissipation (PD) at TC=25C 120 W —
Maximum Junction Temperature 175 C —
Rentang Suhu Hubung Kerja -55 C to +175 C —
Paket TO-252AA (DPAK), surface mount PG-TO252-3-11 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant (Pb-free PBF suffix) —
Level MSL 1 —
Repetitive Avalanche Rating Improved (per datasheet) —
Switching Speed Fast —
Packaging Tape & Reel (TR) —
PBF / Lead-Free Yes (PBF suffix = lead-free) —
Part Family — OptiMOS
Mode — Enhancement
Drain-Source Voltage (Vds) — 55 V
Continuous Drain Current (Id) — 30 A (Tc)
Power Dissipation (Pd) — 136 W (Tc)
Suhu Kerja — -55 °C to +175 °C (Tj)
Automotive Qualification — AEC-Q101 qualified
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow)
Lead-Free / RoHS — Yes (Green Package)
Avalanche Tested — 100 % production-tested
On-State Resistance (Rds(on)) — [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V]
Gate-Source Threshold (Vgs(th)) — Logic-level (typ [DATA_NEEDED: Vth typ/min/max])
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typ at Vds=25V]
Diode Reverse Recovery (trr) — [DATA_NEEDED: trr typ]
Jumlah Pin — 3 (Drain tab + Gate + Source)
Tape and Reel Packaging — Yes (T&R per IEC 60286-3)

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