IRLR3915TRPBF vs IPD30N06S2L13ATMA4 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLR3915TRPBF sa pamamagitan ng Infineon at IPD30N06S2L13ATMA4 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRLR3915TRPBF IRLR3915TRPBF - 55V 61A N-Channel HEXFET MOSFET | Infineon

IRLR3915TRPBF - 55V 61A N-Channel HEXFET MOSFET | Infineon

IRLR3915TRPBF ✓ Nakahanda
Infineon
IPD30N06S2L13ATMA4 IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon

IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon

IPD30N06S2L13ATMA4 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRLR3915TRPBF IPD30N06S2L13ATMA4
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Product Family HEXFET Power MOSFET —
Technology IR MOSFET (HEXFET, advanced process) Planar (OptiMOS)
Channel Type N-Channel N-Channel
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC=25C 61 A —
Continuous Drain Current (ID) at TC=100C 30 A (Tc, per distributor listing) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max at VGS=10V 14 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) 61 nC [DATA_NEEDED: Qg @ Vgs=10V, Id=30A]
Logic-Level Gate Drive Yes (logic-level compatible) —
Power Dissipation (PD) at TC=25C 120 W —
Maximum Junction Temperature 175 C —
Hanay ng Temperature ng Junction na Operasyon -55 C to +175 C —
Packhaging TO-252AA (DPAK), surface mount PG-TO252-3-11 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant (Pb-free PBF suffix) —
Level ng MSL 1 —
Repetitive Avalanche Rating Improved (per datasheet) —
Switching Speed Fast —
Packaging Tape & Reel (TR) —
PBF / Lead-Free Yes (PBF suffix = lead-free) —
Part Family — OptiMOS
Mode — Enhancement
Drain-Source Voltage (Vds) — 55 V
Continuous Drain Current (Id) — 30 A (Tc)
Power Dissipation (Pd) — 136 W (Tc)
Temperature na Operasyon — -55 °C to +175 °C (Tj)
Automotive Qualification — AEC-Q101 qualified
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow)
Lead-Free / RoHS — Yes (Green Package)
Avalanche Tested — 100 % production-tested
On-State Resistance (Rds(on)) — [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V]
Gate-Source Threshold (Vgs(th)) — Logic-level (typ [DATA_NEEDED: Vth typ/min/max])
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typ at Vds=25V]
Diode Reverse Recovery (trr) — [DATA_NEEDED: trr typ]
Bilang ng Pin — 3 (Drain tab + Gate + Source)
Tape and Reel Packaging — Yes (T&R per IEC 60286-3)

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