IRLR8726TRLPBF vs IRLR8726TRPBF Perbandingan

Perbandingan bersamaan detil IRLR8726TRLPBF dari Infineon dan IRLR8726TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLR8726TRLPBF IRLR8726TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TC=25C 86 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) Max at VGS=10V 5.8 mOhm —
On-Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) 15 nC —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Maximum Power Dissipation (PD) at TC=25C 75 W —
Suhu Hubung Kerja -55C to +175C -55C to +175C
Paket TO-252AA (DPAK) TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Technology Family StrongIRFET —
RoHS Compliance ROHS3 Compliant —
Lead-Free Yes (PBF suffix) —
Level MSL 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging) 1
Manufacturer — Infineon Technologies
Part Number — IRLR8726TRPBF
Technology — StrongIRFET™ (HEXFET)
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 30 V
Continuous Drain Current (I_D) at T_C — 86 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max — 5.8 mΩ at V_GS = 10 V
Gate Threshold Voltage V_GS(th) — [DATA_NEEDED: V_GS(th) min/max]
Gate Charge Q_g (typ.) — 15 nC
Power Dissipation P_D — 75 W at T_C
Jumlah Pin — 3 (Gate, Drain, Source)
Status RoHS — Compliant
Bebas Halogen — Yes

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