IRS2011STRPBF vs IRS2302STRPBF Perbandingan

Perbandingan bersamaan detil IRS2011STRPBF dari Infineon dan IRS2302STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2011STRPBF IRS2302STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-Bridge Gate Driver —
Configuration High-Side and Low-Side, Independent Channels —
Jumlah Output 2 —
Maximum Offset Voltage (High-Side) 200 V —
Output Current (Source / Sink) 1 A typical / 1 A typical —
Propagation Delay (ton/toff) 60 ns typical —
Delay Matching 20 ns maximum —
Logic Input Compatibility 3.3 V CMOS / LSTTL 3.3 V, 5 V, 15 V
Bootstrap Supply Integrated bootstrap diode, floating channel —
Supply Voltage (VCC) 10 V to 20 V 5 V to 20 V
Negative Transient Tolerance Yes, dV/dt immune —
Paket 8-SOIC (DSO-8) 8-SOIC (3.90 mm body)
Suhu Kerja -40 C to +125 C -40C to +125C
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant (PBF suffix) Compliant
Suitable Drivers MOSFETs and IGBTs —
Driver Configuration — Half-Bridge (High and Low Side, Independent)
Number of Drivers — 2
Offset Voltage (High-Side) — Up to +600 V
Source Current (typ.) — 0.2 A
Sink Current (typ.) — 0.35 A
Waktu naik — 130 ns (typ.)
Waktu Menurun — 50 ns (typ.)
Propagation Delay — 220 ns (typ.)
Turn-On Delay — [DATA_NEEDED: exact turn-on delay]
Turn-Off Delay — [DATA_NEEDED: exact turn-off delay]
Input Type — Non-Inverting
Shutdown Pin — Yes
UVLO — Yes (VCC and VBS)
Cross-Conduction Protection — Yes (built-in dead time)
Level MSL — 2 (per JEDEC J-STD-020)
Bebas Halogen — Yes

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