IRS2110STRPBF vs IR2110SPBF Perbandingan
Perbandingan bersamaan detil IRS2110STRPBF dari Infineon dan IR2110SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRS2110STRPBF | IR2110SPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Driver Configuration | Half-Bridge | — |
| Number of Drivers | 2 (High-Side and Low-Side) | — |
| Jumlah Output | 2 | — |
| Tipe Output | Non-Inverting | — |
| Maximum Offset Voltage | 500 V | — |
| Gate Drive Supply (VCC) | 10 V to 20 V | — |
| Source/Sink Output Current (typ.) | 2.5 A / 2.5 A | — |
| Propagation Delay ton/toff (typ.) | 30 ns / 30 ns | — |
| Rise/Fall Time (typ.) | 17 ns / 25 ns | — |
| Logic Input Compatibility | CMOS/TTL compatible (3.3 V logic compatible) | 3.3 V CMOS / LSTTL |
| Bootstrap Diode | Integrated | Integrated |
| Shutdown Input | Active-low, forces both outputs low | — |
| Undervoltage Lockout | Yes (VCC and VBS) | — |
| Suhu Kerja | -40 C to +150 C | — |
| Paket | 16-pin SOIC Wide-Body (SOIC-WB), Tape and Reel | 16-pin SOIC (SO-16, DW suffix) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 3 (168 hours) | — |
| Lead-Free / RoHS | Lead-Free, RoHS Compliant | Yes / Compliant (Pb-free PBF suffix) |
| Fungsi | — | Half-bridge gate driver |
| Topologi | — | High-side and low-side referenced output channels |
| Number of Channels | — | 2 (1 high-side, 1 low-side) |
| Logic Type | — | Non-inverting |
| Maximum Offset Voltage (Voffset) | — | 500 V |
| Gate Drive Supply Voltage (Vcc/VCC) | — | 10 V to 20 V |
| Peak Output Current (source/sink) | — | 2.0 A / 2.0 A |
| Typical Propagation Delay (ton/toff) | — | 94 ns / 94 ns |
| Rise/Fall Time (typical) | — | 25 ns / 17 ns |
| Undervoltage Lockout (UVLO) | — | Yes, both Vcc and VCC |
| Rentang Suhu Kerja | — | -40 C to +125 C |
| Technology | — | HVIC + latch-immune CMOS |