IRS2153DSTRPBF vs IR21531STRPBF Perbandingan

Perbandingan bersamaan detil IRS2153DSTRPBF dari Infineon dan IR21531STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2153DSTRPBF IR21531STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Topologi Half-Bridge Gate Driver with internal oscillator —
High-Side Floating Supply Absolute Max 600 V —
VDD Supply Voltage Range 10 V to 20 V —
Output Source Current (typ.) 0.18 A —
Output Sink Current (typ.) 0.26 A —
Internal Propagation Delay (typ.) 1.1 us —
Integrated Bootstrap FET Yes —
Oscillator Type RC-based, similar to CMOS 555 timer —
Programmable Shutdown Pin Yes —
Paket 8-pin SOIC 8-pin SOIC (SO-8)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -40C to +125C —
Technology HVIC + latch-immune CMOS —
Status RoHS Compliant Compliant (ROHS3)
Lead-Free Yes —
Configuration — Half-Bridge
Driver Type — High-side and Low-side, self-oscillating
Jumlah Output — 2 (high-side, low-side)
Supply Voltage (VCC) — 10 V to 20 V
Internal VCC Clamp — 15.6 V
High-Side Offset Voltage — up to 600 V
Peak Source/Sink Current — 250 mA
Waktu naik — 80 ns
Waktu Menurun — 45 ns
Dead-Time — 0.6 microseconds (typical)
Oscillator — External RC programmable
Bootstrap Diode — Integrated
Input Logic — CMOS Schmitt-trigger (RC timing)
Suhu Kerja — -40C to +125C
Lead Finish — Pb-free (PBF suffix)

Spek dan Sumber

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