IRS2153DSTRPBF vs IR2153STRPBF Perbandingan

Perbandingan bersamaan detil IRS2153DSTRPBF dari Infineon dan IR2153STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2153DSTRPBF IR2153STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Topologi Half-Bridge Gate Driver with internal oscillator —
High-Side Floating Supply Absolute Max 600 V —
VDD Supply Voltage Range 10 V to 20 V —
Output Source Current (typ.) 0.18 A —
Output Sink Current (typ.) 0.26 A —
Internal Propagation Delay (typ.) 1.1 us —
Integrated Bootstrap FET Yes —
Oscillator Type RC-based, similar to CMOS 555 timer Self-oscillating RC
Programmable Shutdown Pin Yes —
Paket 8-pin SOIC 8-SOIC (3.90 mm width)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -40C to +125C —
Technology HVIC + latch-immune CMOS —
Status RoHS Compliant —
Lead-Free Yes —
Configuration — Half-Bridge
Jumlah Output — 2 (High Side / Low Side)
Offset Voltage (Max) — 600 V
Supply Voltage (VCC) — 10 V to 15.6 V (zener clamped)
Bootstrap Supply Voltage (VB) — VCC + 10 V to VCC + 15.6 V (clamped)
Source/Sink Current (Peak) — 200 mA / 400 mA
Output Current — 0.4 A
Propagation Delay — 1.2 us
Rise / Fall Time — [DATA_NEEDED: rise/fall time]
Deadtime Control — Programmable via CT, tighter initial control
UVLO Hysteresis — 1 V
Shutdown Feature — 1/6 VCC threshold on CT pin
Suhu Kerja — -40C to +125C
Lead Free / RoHS — Yes (PBF suffix)
Level MSL — 1

Spek dan Sumber

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