ISC011N06LM5ATMA1 vs IPZ40N04S53R1ATMA1 Perbandingan
Perbandingan bersamaan detil ISC011N06LM5ATMA1 dari Infineon dan IPZ40N04S53R1ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC011N06LM5ATMA1 | IPZ40N04S53R1ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | ISC011N06LM5ATMA1 | — |
| Technology | OptiMOS 5 | MOSFET (Metal Oxide) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 37 A | — |
| Continuous Drain Current (ID) at Tc | 288 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 188 W | — |
| RDS(on) max at VGS=10V | 1.15 mOhm | — |
| Paket | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TSDSON-8 (5x6 mm) with exposed pad |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 8 | — |
| Rentang Suhu Kerja | -55C to +175C | -55 C to +175 C |
| Status RoHS | Compliant | — |
| Level MSL | [DATA_NEEDED: MSL level] | MSL1 (260 C peak reflow) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D) at Tc=25 C | — | 40 A |
| Power Dissipation (P_D) at Tc=25 C | — | 71 W |
| R_DS(on) max at V_GS=10 V, I_D=20 A | — | 3.1 mOhm |
| Drive Voltage (Max R_DS on, Min R_DS on) | — | 7 V, 10 V |
| Maximum V_GS | — | +/-20 V |
| Qualification | — | AEC-Q101 automotive |
| Avalanche Tested | — | 100 % |
| RoHS Compliance | — | Compliant (Green Product) |
| Series | — | OptiMOS 5 (IPZ family) |