ISC011N06LM5ATMA1 vs IPZ40N04S53R1ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC011N06LM5ATMA1 disebabkan oleh Infineon dan IPZ40N04S53R1ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC011N06LM5ATMA1 | IPZ40N04S53R1ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | ISC011N06LM5ATMA1 | — |
| Technology | OptiMOS 5 | MOSFET (Metal Oxide) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 37 A | — |
| Continuous Drain Current (ID) at Tc | 288 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 188 W | — |
| RDS(on) max at VGS=10V | 1.15 mOhm | — |
| Kemasan | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TSDSON-8 (5x6 mm) with exposed pad |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 8 | — |
| Gambaran Suhu Operasi | -55C to +175C | -55 C to +175 C |
| Status RoHS | Compliant | — |
| Aras MSL | [DATA_NEEDED: MSL level] | MSL1 (260 C peak reflow) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D) at Tc=25 C | — | 40 A |
| Power Dissipation (P_D) at Tc=25 C | — | 71 W |
| R_DS(on) max at V_GS=10 V, I_D=20 A | — | 3.1 mOhm |
| Drive Voltage (Max R_DS on, Min R_DS on) | — | 7 V, 10 V |
| Maximum V_GS | — | +/-20 V |
| Qualification | — | AEC-Q101 automotive |
| Avalanche Tested | — | 100 % |
| RoHS Compliance | — | Compliant (Green Product) |
| Series | — | OptiMOS 5 (IPZ family) |