ISC011N06LM5ATMA1 vs IPZ40N04S53R1ATMA1 比較
詳細並排比較 ISC011N06LM5ATMA1 由 Infineon 與 IPZ40N04S53R1ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC011N06LM5ATMA1 | IPZ40N04S53R1ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | ISC011N06LM5ATMA1 | — |
| Technology | OptiMOS 5 | MOSFET (Metal Oxide) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 37 A | — |
| Continuous Drain Current (ID) at Tc | 288 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 188 W | — |
| RDS(on) max at VGS=10V | 1.15 mOhm | — |
| 封裝 | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TSDSON-8 (5x6 mm) with exposed pad |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 | — |
| 工作溫度範圍 | -55C to +175C | -55 C to +175 C |
| RoHS 狀態 | Compliant | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | MSL1 (260 C peak reflow) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D) at Tc=25 C | — | 40 A |
| Power Dissipation (P_D) at Tc=25 C | — | 71 W |
| R_DS(on) max at V_GS=10 V, I_D=20 A | — | 3.1 mOhm |
| Drive Voltage (Max R_DS on, Min R_DS on) | — | 7 V, 10 V |
| Maximum V_GS | — | +/-20 V |
| Qualification | — | AEC-Q101 automotive |
| Avalanche Tested | — | 100 % |
| RoHS Compliance | — | Compliant (Green Product) |
| Series | — | OptiMOS 5 (IPZ family) |